IRG4BC30UD PDF and Equivalents Search

 

IRG4BC30UD Specs and Replacement

Type Designator: IRG4BC30UD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 23 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 21 nS

Coesⓘ - Output Capacitance, typ: 73 pF

Package: TO220AB

 IRG4BC30UD Substitution

- IGBT ⓘ Cross-Reference Search

 

IRG4BC30UD datasheet

 ..1. Size:237K  international rectifier
 irg4bc30ud.pdf pdf_icon

IRG4BC30UD

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒

 0.1. Size:381K  international rectifier
 irg4bc30udpbf.pdf pdf_icon

IRG4BC30UD

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features UltraFast Optimized for high operating C frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.95V G Generation ... See More ⇒

 5.1. Size:173K  international rectifier
 irg4bc30u.pdf pdf_icon

IRG4BC30UD

D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation... See More ⇒

 5.2. Size:324K  international rectifier
 auirg4bc30u-s.pdf pdf_icon

IRG4BC30UD

PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant ... See More ⇒

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Specs: IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , GT30F125 , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD .

History: IRG4IBC20UD

Keywords - IRG4BC30UD transistor spec

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