All IGBT. IRG4BC30UD Datasheet

 

IRG4BC30UD IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4BC30UD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 73 pF
   Qgⓘ - Total Gate Charge, typ: 50 nC
   Package: TO220AB

 IRG4BC30UD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4BC30UD Datasheet (PDF)

 ..1. Size:237K  international rectifier
 irg4bc30ud.pdf

IRG4BC30UD IRG4BC30UD

PD 91453BIRG4BC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

 0.1. Size:381K  international rectifier
 irg4bc30udpbf.pdf

IRG4BC30UD IRG4BC30UD

PD-94810AIRG4BC30UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.95VG Generation

 5.1. Size:173K  international rectifier
 irg4bc30u.pdf

IRG4BC30UD IRG4BC30UD

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation

 5.2. Size:324K  international rectifier
 auirg4bc30u-s.pdf

IRG4BC30UD IRG4BC30UD

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 5.3. Size:213K  international rectifier
 irg4bc30u-s.pdf

IRG4BC30UD IRG4BC30UD

PD - 91803IRG4BC30U-SUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 12AE Indust

Datasheet: IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4PH50UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD .

 

 
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