IRG4BC30UD - параметры транзистора, его аналоги, Даташиты

IRG4BC30UD Datasheet (PDF)

..1. Size:237K international rectifier
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PD 91453BIRG4BC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

0.1. Size:381K international rectifier
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PD-94810AIRG4BC30UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.95VG Generation

5.1. Size:173K international rectifier
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D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation

5.2. Size:324K international rectifier
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PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant