IRG4BC30W-S IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4BC30W-S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 150

Package: D2PAK

IRG4BC30W-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC30W-S IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4BC30W-S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 150

Package: D2PAK

IRG4BC30W-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC30W-S Datasheet (PDF)

0.1. irg4bc30w-s.pdf Size:169K _international_rectifier

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channe

5.1. irg4bc30w.pdf Size:142K _international_rectifier

 D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

 6.1. irg4bc30f.pdf Size:172K _international_rectifier

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VG

6.2. irg4bc30fd-s.pdf Size:1260K _international_rectifier

PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features VCE(on) typ. = 1.59V • Fast: optimized for medium operating frequencies G (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A E parameter distribution and higher efficiency than Generation

 6.3. irg4bc30u-s.pdf Size:213K _international_rectifier

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E • Indust

6.4. auirg4bc30s-s.pdf Size:301K _international_rectifier

AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (< 1kHz) • Lead-Free, RoHS Compliant E @VGE = 15V, IC = 18A • Automotive Qualified * n-channel Benefits • Typical Applications: PTC

 6.5. irg4bc30k-s.pdf Size:164K _international_rectifier

 D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G • Latest generation desig

6.6. irg4bc30u.pdf Size:173K _international_rectifier

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation

6.7. irg4bc30kds.pdf Size:225K _international_rectifier

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.21V • Combines low conduction losses with high G switch

6.8. irg4bc30udpbf.pdf Size:381K _international_rectifier

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.95V G Generation

6.9. irg4bc30s.pdf Size:164K _international_rectifier

 D I I T I T D T I T I T Features C Features Features Features Features • Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry sta

6.10. irg4bc30k.pdf Size:140K _international_rectifier

 D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed • Latest generation design

6.11. auirg4bc30u-s.pdf Size:324K _international_rectifier

PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant •

6.12. irg4bc30kd.pdf Size:342K _international_rectifier

PD -94910A IRG4BC30KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed • tighter parameter distribu

6.13. irg4bc30kd-s.pdf Size:228K _international_rectifier

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.21V • Combines low conduction losses with high G switch

6.14. irg4bc30s-s.pdf Size:156K _international_rectifier

PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency VCE(on) typ. = 1.4V G @VGE = 15V, IC = 18A E n-channel Benefits • Generation 4 IGBTs offer highe

6.15. irg4bc30fd.pdf Size:302K _international_rectifier

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and hig

6.16. irg4bc30ud.pdf Size:237K _international_rectifier

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

Datasheet: IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , RJP63K2DPK-M0 , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD .

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