Справочник IGBT. IRG4BC30W-S

 

IRG4BC30W-S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4BC30W-S

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 100

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.1

Максимальный постоянный ток коллектора (Ic): 12

Максимальная температура перехода (Tj): 150

Тип корпуса: D2PAK

Аналог (замена) для IRG4BC30W-S

 

 

IRG4BC30W-S Datasheet (PDF)

0.1. irg4bc30w-s.pdf Size:169K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-SINSULATED GATE BIPOLAR TRANSISTORFeatures C Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.10VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12AE Low IGBT conduction lossesn-channe

5.1. irg4bc30w.pdf Size:142K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC

 6.1. irg4bc30f.pdf Size:172K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VG

6.2. irg4bc30fd-s.pdf Size:1260K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD - 96929IRG4BC30FD-SFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeaturesVCE(on) typ. = 1.59V Fast: optimized for medium operating frequenciesG (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter@VGE = 15V, IC = 17AE parameter distribution and higher efficiency than Generation

 6.3. irg4bc30u-s.pdf Size:213K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD - 91803IRG4BC30U-SUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 12AE Indust

6.4. auirg4bc30s-s.pdf Size:301K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 6.5. irg4bc30k-s.pdf Size:164K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21V switching speed G Latest generation desig

6.6. irg4bc30u.pdf Size:173K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation

6.7. irg4bc30kds.pdf Size:225K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switch

6.8. irg4bc30udpbf.pdf Size:381K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD-94810AIRG4BC30UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.95VG Generation

6.9. irg4bc30s.pdf Size:164K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

6.10. irg4bc30k.pdf Size:140K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design

6.11. auirg4bc30u-s.pdf Size:324K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

6.12. irg4bc30kd.pdf Size:342K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -94910AIRG4BC30KDPbF Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures C High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed tighter parameter distribu

6.13. irg4bc30kd-s.pdf Size:228K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switch

6.14. irg4bc30s-s.pdf Size:156K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD - 94069IRG4BC30S-SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

6.15. irg4bc30fd.pdf Size:302K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -91451BIRG4BC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and hig

6.16. irg4bc30ud.pdf Size:237K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD 91453BIRG4BC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

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