IRG4BC30K Datasheet. Specs and Replacement

Type Designator: IRG4BC30K  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 28 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.21 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 110 pF

Package: TO220AB

 IRG4BC30K Substitution

- IGBTⓘ Cross-Reference Search

 

IRG4BC30K datasheet

 ..1. Size:140K  international rectifier
irg4bc30k.pdf pdf_icon

IRG4BC30K

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design... See More ⇒

 0.1. Size:164K  international rectifier
irg4bc30k-s.pdf pdf_icon

IRG4BC30K

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G Latest generation desig... See More ⇒

 0.2. Size:342K  international rectifier
irg4bc30kd.pdf pdf_icon

IRG4BC30K

PD -94910A IRG4BC30KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed tighter parameter distribu... See More ⇒

 0.3. Size:225K  international rectifier
irg4bc30kds.pdf pdf_icon

IRG4BC30K

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switch... See More ⇒

Specs: IRG4BC20S, IRG4BC20SD, IRG4BC20SD-S, IRG4BC20U, IRG4BC20UD, IRG4BC20W, IRG4BC30F, IRG4BC30FD, STGW60V60DF, IRG4BC30KD, IRG4BC30KD-S, IRG4BC30K-S, IRG4BC30S, IRG4BC30U, IRG4BC30UD, IRG4BC30W, IRG4BC30W-S

Keywords - IRG4BC30K transistor spec

 IRG4BC30K cross reference
 IRG4BC30K equivalent finder
 IRG4BC30K lookup
 IRG4BC30K substitution
 IRG4BC30K replacement