IRG4BC30K Todos los transistores

 

IRG4BC30K IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC30K

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.21 V @25℃

trⓘ - Tiempo de subida, typ: 28 nS

Coesⓘ - Capacitancia de salida, typ: 110 pF

Encapsulados: TO220AB

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IRG4BC30K datasheet

 ..1. Size:140K  international rectifier
 irg4bc30k.pdf pdf_icon

IRG4BC30K

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design

 0.1. Size:164K  international rectifier
 irg4bc30k-s.pdf pdf_icon

IRG4BC30K

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G Latest generation desig

 0.2. Size:342K  international rectifier
 irg4bc30kd.pdf pdf_icon

IRG4BC30K

PD -94910A IRG4BC30KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed tighter parameter distribu

 0.3. Size:225K  international rectifier
 irg4bc30kds.pdf pdf_icon

IRG4BC30K

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switch

MOSTRAR MÁS

Otros transistores... IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , STGW60V60DF , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S .

 

 

 


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