All IGBT. IRG4BC30K-S Datasheet

 

IRG4BC30K-S IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4BC30K-S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.21 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qgⓘ - Total Gate Charge, typ: 67 nC
   Package: D2PAK

 IRG4BC30K-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4BC30K-S Datasheet (PDF)

 ..1. Size:164K  international rectifier
 irg4bc30k-s.pdf

IRG4BC30K-S IRG4BC30K-S

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21V switching speed G Latest generation desig

 5.1. Size:140K  international rectifier
 irg4bc30k.pdf

IRG4BC30K-S IRG4BC30K-S

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design

 5.2. Size:342K  international rectifier
 irg4bc30kd.pdf

IRG4BC30K-S IRG4BC30K-S

PD -94910AIRG4BC30KDPbF Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures C High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed tighter parameter distribu

 5.3. Size:225K  international rectifier
 irg4bc30kds.pdf

IRG4BC30K-S IRG4BC30K-S

PD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switch

 5.4. Size:228K  international rectifier
 irg4bc30kd-s.pdf

IRG4BC30K-S IRG4BC30K-S

PD -91594CIRG4BC30KD-S Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switch

Datasheet: IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , GT60N321 , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S .

 

 
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