6MBP200VDA060-50 Todos los transistores

 

6MBP200VDA060-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 6MBP200VDA060-50
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 462 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.35 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

6MBP200VDA060-50 Datasheet (PDF)

 0.1. Size:370K  fuji
6mbp200vda060-50.pdf pdf_icon

6MBP200VDA060-50

http://www.fujielectric.com/products/semiconductor/6MBP200VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 200A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

 6.1. Size:339K  fuji
6mbp200vea060-50.pdf pdf_icon

6MBP200VDA060-50

http://www.fujielectric.com/products/semiconductor/6MBP200VEA060-50 IGBT ModulesIGBT MODULE (V series)600V / 200A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

 6.2. Size:345K  fuji
6mbp200vea120-50.pdf pdf_icon

6MBP200VDA060-50

http://www.fujielectric.com/products/semiconductor/6MBP200VEA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 200A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big dec

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History: APTGT600U170D4 | APTGT75SK120D1

6MBP200VDA060-50
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