Справочник IGBT. 6MBP200VDA060-50

 

6MBP200VDA060-50 Даташит. Аналоги. Параметры и характеристики.


   Наименование: 6MBP200VDA060-50
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 462 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.35 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Тип корпуса: MODULE
     - подбор IGBT транзистора по параметрам

 

6MBP200VDA060-50 Datasheet (PDF)

 0.1. Size:370K  fuji
6mbp200vda060-50.pdfpdf_icon

6MBP200VDA060-50

http://www.fujielectric.com/products/semiconductor/6MBP200VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 200A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

 6.1. Size:339K  fuji
6mbp200vea060-50.pdfpdf_icon

6MBP200VDA060-50

http://www.fujielectric.com/products/semiconductor/6MBP200VEA060-50 IGBT ModulesIGBT MODULE (V series)600V / 200A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

 6.2. Size:345K  fuji
6mbp200vea120-50.pdfpdf_icon

6MBP200VDA060-50

http://www.fujielectric.com/products/semiconductor/6MBP200VEA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 200A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big dec

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History: APTGT75SK120D1 | APTGT600U170D4

 

 
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