6MBP75VBA060-50 Todos los transistores

 

6MBP75VBA060-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 6MBP75VBA060-50
   Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 198 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

6MBP75VBA060-50 Datasheet (PDF)

 0.1. Size:466K  fuji
6mbp75vba060-50.pdf pdf_icon

6MBP75VBA060-50

http://www.fujielectric.com/products/semiconductor/6MBP75VBA060-50 IGBT ModulesIGBT MODULE (V series)600V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating protec

 7.1. Size:363K  fuji
6mbp75vda060-50.pdf pdf_icon

6MBP75VBA060-50

http://www.fujielectric.com/products/semiconductor/6MBP75VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea

 7.2. Size:370K  fuji
6mbp75vda120-50.pdf pdf_icon

6MBP75VBA060-50

http://www.fujielectric.com/products/semiconductor/6MBP75VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

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