Справочник IGBT. 6MBP75VBA060-50

 

6MBP75VBA060-50 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: 6MBP75VBA060-50
   Тип транзистора: IGBT + Diode + Built-in Zener Diodes
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 198 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 1.6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Тип корпуса: MODULE

 Аналог (замена) для 6MBP75VBA060-50

 

 

6MBP75VBA060-50 Datasheet (PDF)

 0.1. Size:466K  fuji
 6mbp75vba060-50.pdf

6MBP75VBA060-50 6MBP75VBA060-50

http://www.fujielectric.com/products/semiconductor/6MBP75VBA060-50 IGBT ModulesIGBT MODULE (V series)600V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating protec

 7.1. Size:363K  fuji
 6mbp75vda060-50.pdf

6MBP75VBA060-50 6MBP75VBA060-50

http://www.fujielectric.com/products/semiconductor/6MBP75VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea

 7.2. Size:370K  fuji
 6mbp75vda120-50.pdf

6MBP75VBA060-50 6MBP75VBA060-50

http://www.fujielectric.com/products/semiconductor/6MBP75VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

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