7MBP50VDA060-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 7MBP50VDA060-50
Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 201 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
7MBP50VDA060-50 Datasheet (PDF)
7mbp50vda060-50.pdf

http://www.fujielectric.com/products/semiconductor/7MBP50VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea
7mbp50vda120-50.pdf

http://www.fujielectric.com/products/semiconductor/7MBP50VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre
Otros transistores... 7MBP150VDA060-50 , 7MBP150VEA120-50 , 7MBP200VDA060-50 , 7MBP200VEA060-50 , 7MBP200VEA120-50 , 7MBP25VDA120-50 , 7MBP300VEA060-50 , 7MBP35VDA120-50 , IRGB20B60PD1 , 7MBP50VDA120-50 , 7MBP75TEA060 , 7MBP75VDA060-50 , 7MBP75VDA120-50 , 7MBR100U2B060 , 7MBR100VB060-50 , 7MBR100VN120-50 , 7MBR100VP060-50 .
History: MMG75S170B | IXGH30N60B | IRG7PH35UD1M | NGTB50N120FL2WG | BSM30GD60DLC_E3224 | IRG4BC30UD | SKM195GAR063DN
History: MMG75S170B | IXGH30N60B | IRG7PH35UD1M | NGTB50N120FL2WG | BSM30GD60DLC_E3224 | IRG4BC30UD | SKM195GAR063DN



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