BM63364S-VC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BM63364S-VC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 41 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: MODULE
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BM63364S-VC Datasheet (PDF)
bm63364s-va bm63364s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for low speed switching drive BM63364S-VA BM63364S-VC General Description Key Specifications BM63364S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Low
bm63363s-va bm63363s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for low speed switching drive BM63363S-VA BM63363S-VC General Description Key Specifications BM63363S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Low
Otros transistores... 7MBR75VB120-50 , 7MBR75VN120-50 , 7MBR75VP060-50 , 7MBR75VR120-50 , 7MBR75VX120-50 , BM63363S-VA , BM63363S-VC , BM63364S-VA , MBQ50T65FDSC , BM63763S-VA , BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , BSM10GD120DN2_E3224 , BSM10GP120 , BSM10GP60 .
History: IRGB4610D | NGTG30N60FWG
History: IRGB4610D | NGTG30N60FWG
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