BM63764S-VA Todos los transistores

 

BM63764S-VA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BM63764S-VA
   Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 41 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE
 

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BM63764S-VA Datasheet (PDF)

 ..1. Size:970K  rohm
 bm63764s-va bm63764s-vc.pdf pdf_icon

BM63764S-VA

DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switching drive BM63764S-VA BM63764S-VC General Description Key Specifications BM63764S-VA /-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Sm

 8.1. Size:970K  rohm
 bm63763s-va bm63763s-vc.pdf pdf_icon

BM63764S-VA

DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switching drive BM63763S-VA BM63763S-VC General Description Key Specifications BM63763S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Sma

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History: TA49015 | SPM1005 | IXGF25N250 | BLQG50T65FDLA-W

 

 
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