BSM10GD120DN2_E3224 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM10GD120DN2_E3224  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 80 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: MODULE

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BSM10GD120DN2_E3224 datasheet

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 bsm10gd120dn2 e3224.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

 1.1. Size:250K  eupec
 bsm10gd120dn2.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1

 8.1. Size:158K  eupec
 bsm10gp60.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical Information IGBT-Module BSM10GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl

 8.2. Size:126K  eupec
 bsm10gp120.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl

MOSTRAR MÁS

Otros transistores... BM63363S-VC, BM63364S-VA, BM63364S-VC, BM63763S-VA, BM63763S-VC, BM63764S-VA, BM63764S-VC, BSM10GD120DN2, CRG75T60AK3HD, BSM10GP120, BSM10GP60, BSM150GAL120DLC, BSM150GAL120DN2, BSM150GAR120DN2, BSM150GB120DLC, BSM150GB120DN2, BSM150GB170DLC