BSM10GD120DN2_E3224 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM10GD120DN2_E3224
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 80 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 80 pF
Paquete / Cubierta: MODULE
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BSM10GD120DN2_E3224 Datasheet (PDF)
bsm10gd120dn2 e3224.pdf

BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage
bsm10gd120dn2.pdf

BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm10gp60.pdf

Technische Information / Technical InformationIGBT-ModuleBSM10GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl
bsm10gp120.pdf

Technische Information / Technical InformationIGBT-ModuleBSM10GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl
Otros transistores... BM63363S-VC , BM63364S-VA , BM63364S-VC , BM63763S-VA , BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , SGH80N60UFD , BSM10GP120 , BSM10GP60 , BSM150GAL120DLC , BSM150GAL120DN2 , BSM150GAR120DN2 , BSM150GB120DLC , BSM150GB120DN2 , BSM150GB170DLC .
History: APT60GT60JRD | NGTB50N120FL2 | RJQ6015DPM | BLG3040-D | MIEB100W1200DPFTEH | IXGP2N100A | OST60N65HSMF
History: APT60GT60JRD | NGTB50N120FL2 | RJQ6015DPM | BLG3040-D | MIEB100W1200DPFTEH | IXGP2N100A | OST60N65HSMF



Liste
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