BSM10GD120DN2_E3224 Todos los transistores

 

BSM10GD120DN2_E3224 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM10GD120DN2_E3224
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 80 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: MODULE
 

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BSM10GD120DN2_E3224 PDF specs

 0.1. Size:277K  eupec
 bsm10gd120dn2 e3224.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage... See More ⇒

 1.1. Size:250K  eupec
 bsm10gd120dn2.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1... See More ⇒

 8.1. Size:158K  eupec
 bsm10gp60.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical Information IGBT-Module BSM10GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl... See More ⇒

 8.2. Size:126K  eupec
 bsm10gp120.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl... See More ⇒

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Otros transistores... BM63363S-VC , BM63364S-VA , BM63364S-VC , BM63763S-VA , BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , CRG15T120BNR3S , BSM10GP120 , BSM10GP60 , BSM150GAL120DLC , BSM150GAL120DN2 , BSM150GAR120DN2 , BSM150GB120DLC , BSM150GB120DN2 , BSM150GB170DLC .

History: MG06100S-BR1MM | BSM25GB120DN2 | CM15TF-12H | CM1200HB-50H | BSM200GA120DLC | BSM200GB170DLC | MG1240H-XBN2MM

 

 
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