BSM10GD120DN2_E3224 Todos los transistores

 

BSM10GD120DN2_E3224 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM10GD120DN2_E3224
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 80 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

BSM10GD120DN2_E3224 Datasheet (PDF)

 0.1. Size:277K  eupec
 bsm10gd120dn2 e3224.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

 1.1. Size:250K  eupec
 bsm10gd120dn2.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 8.1. Size:158K  eupec
 bsm10gp60.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM10GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

 8.2. Size:126K  eupec
 bsm10gp120.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM10GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

MOSTRAR MÁS

Otros transistores... BM63363S-VC , BM63364S-VA , BM63364S-VC , BM63763S-VA , BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , JT075N065WED , BSM10GP120 , BSM10GP60 , BSM150GAL120DLC , BSM150GAL120DN2 , BSM150GAR120DN2 , BSM150GB120DLC , BSM150GB120DN2 , BSM150GB170DLC .

History: MMG75WD120XB6T4N | MMG400D120UA6TC | DAHF100G120SA

 

 
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