BSM10GD120DN2_E3224 PDF Specs and Replacement
Type Designator: BSM10GD120DN2_E3224
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 80 pF
Package: MODULE
BSM10GD120DN2_E3224 Substitution
BSM10GD120DN2_E3224 PDF specs
bsm10gd120dn2 e3224.pdf
BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage... See More ⇒
bsm10gd120dn2.pdf
BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1... See More ⇒
bsm10gp60.pdf
Technische Information / Technical Information IGBT-Module BSM10GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl... See More ⇒
bsm10gp120.pdf
Technische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl... See More ⇒
Specs: BM63363S-VC , BM63364S-VA , BM63364S-VC , BM63763S-VA , BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , CRG15T120BNR3S , BSM10GP120 , BSM10GP60 , BSM150GAL120DLC , BSM150GAL120DN2 , BSM150GAR120DN2 , BSM150GB120DLC , BSM150GB120DN2 , BSM150GB170DLC .
History: MG12300D-BN2MM
Keywords - BSM10GD120DN2_E3224 transistor spec
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BSM10GD120DN2_E3224 equivalent finder
BSM10GD120DN2_E3224 lookup
BSM10GD120DN2_E3224 substitution
BSM10GD120DN2_E3224 replacement
History: MG12300D-BN2MM
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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