All IGBT. BSM10GD120DN2_E3224 Datasheet

 

BSM10GD120DN2_E3224 Datasheet and Replacement


   Type Designator: BSM10GD120DN2_E3224
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 80 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Package: MODULE
      - IGBT Cross-Reference

 

BSM10GD120DN2_E3224 Datasheet (PDF)

 0.1. Size:277K  eupec
 bsm10gd120dn2 e3224.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

 1.1. Size:250K  eupec
 bsm10gd120dn2.pdf pdf_icon

BSM10GD120DN2_E3224

BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 8.1. Size:158K  eupec
 bsm10gp60.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM10GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

 8.2. Size:126K  eupec
 bsm10gp120.pdf pdf_icon

BSM10GD120DN2_E3224

Technische Information / Technical InformationIGBT-ModuleBSM10GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

SHOW MORE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | 2SH29

Keywords - BSM10GD120DN2_E3224 transistor datasheet

 BSM10GD120DN2_E3224 cross reference
 BSM10GD120DN2_E3224 equivalent finder
 BSM10GD120DN2_E3224 lookup
 BSM10GD120DN2_E3224 substitution
 BSM10GD120DN2_E3224 replacement

 

 
Back to Top

 


 
.