BSM150GAL120DN2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM150GAL120DN2 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 210 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
trⓘ - Tiempo de subida, typ: 100 nS
Coesⓘ - Capacitancia de salida, typ: 1600 pF
Encapsulados: MODULE
📄📄 Copiar
Búsqueda de reemplazo de BSM150GAL120DN2 IGBT
- Selecciónⓘ de transistores por parámetros
BSM150GAL120DN2 datasheet
bsm150gal120dn2.pdf
BSM 150 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE
bsm150gal120dlc.pdf
Technische Information / technical information IGBT-Module BSM150GAL120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit
bsm150gar120dn2.pdf
BSM 150 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE
Otros transistores... BM63763S-VC, BM63764S-VA, BM63764S-VC, BSM10GD120DN2, BSM10GD120DN2_E3224, BSM10GP120, BSM10GP60, BSM150GAL120DLC, FGH60N60SFD, BSM150GAR120DN2, BSM150GB120DLC, BSM150GB120DN2, BSM150GB170DLC, BSM150GB170DN2, BSM150GB60DLC, BSM150GD60DLC, BSM15GD120DN2
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
ss8050 | irfp4668 | mpsa56 | c3205 transistor | tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n



