BSM150GAL120DN2 Todos los transistores

 

BSM150GAL120DN2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM150GAL120DN2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 210 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Coesⓘ - Capacitancia de salida, typ: 1600 pF
   Paquete / Cubierta: MODULE
 

 Búsqueda de reemplazo de BSM150GAL120DN2 IGBT

   - Selección ⓘ de transistores por parámetros

 

BSM150GAL120DN2 PDF specs

 0.1. Size:142K  eupec
 bsm150gal120dn2.pdf pdf_icon

BSM150GAL120DN2

BSM 150 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE ... See More ⇒

 1.1. Size:288K  eupec
 bsm150gal120dlc.pdf pdf_icon

BSM150GAL120DN2

Technische Information / technical information IGBT-Module BSM150GAL120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit... See More ⇒

 6.1. Size:141K  eupec
 bsm150gar120dn2.pdf pdf_icon

BSM150GAL120DN2

BSM 150 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GAR 120 DN2 1200V 210A HALF BRIDGE GAR 2 C67076-A2013-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE ... See More ⇒

SHOW MORE

Otros transistores... BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , BSM10GD120DN2_E3224 , BSM10GP120 , BSM10GP60 , BSM150GAL120DLC , JT075N065WED , BSM150GAR120DN2 , BSM150GB120DLC , BSM150GB120DN2 , BSM150GB170DLC , BSM150GB170DN2 , BSM150GB60DLC , BSM150GD60DLC , BSM15GD120DN2 .

 

 
Back to Top

 


 
.