BSM200GB120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM200GB120DN2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 290 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 2000 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
BSM200GB120DN2 Datasheet (PDF)
bsm200gb120dn2.pdf

BSM 200 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
bsm200gb120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM200GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
bsm200gb120dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM200GB120DLCIGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 420
bsm200gb170dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj = 25C VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollek
Otros transistores... BSM200GA120DN2S , BSM200GA170DLC , BSM200GA170DN2 , BSM200GA170DN2S , BSM200GAL120DLC , BSM200GAL120DN2 , BSM200GAR120DN2 , BSM200GB120DLC , MGD623S , BSM200GB170DLC , BSM200GB60DLC , BSM200GD60DLC , BSM20GD60DLC_E3224 , BSM25GAL120DN2 , BSM25GB120DN2 , BSM25GD120DN2 , BSM25GD120DN2_E3224 .
History: DM2G75SH6N | CM100RL-24NF | CM600DXL-24S | CM50YE13-12H | MMG200D120B6UC | OM6516SC | DM2G150SH6NE
History: DM2G75SH6N | CM100RL-24NF | CM600DXL-24S | CM50YE13-12H | MMG200D120B6UC | OM6516SC | DM2G150SH6NE



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