BSM25GD120DN2 Todos los transistores

 

BSM25GD120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM25GD120DN2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 65 nS
   Coesⓘ - Capacitancia de salida, typ: 250 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

BSM25GD120DN2 Datasheet (PDF)

 ..1. Size:261K  eupec
 bsm25gd120dn2.pdf pdf_icon

BSM25GD120DN2

BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 ..2. Size:267K  eupec
 bsm25gd120dn2 e3224.pdf pdf_icon

BSM25GD120DN2

BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

 8.1. Size:66K  siemens
 bsm25gal120dn2.pdf pdf_icon

BSM25GD120DN2

BSM 25 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200

 8.2. Size:205K  eupec
 bsm25gb120dn2.pdf pdf_icon

BSM25GD120DN2

BSM 25 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: AUIRGP35B60PD-E | IXYH40N65C3H1 | IKW40N65F5 | SGTQ40T120SDB2P7 | JNG40T65HYU1 | CM300DU-12F | GT25H101

 

 
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