BSM25GD120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM25GD120DN2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Paquete / Cubierta: MODULE
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BSM25GD120DN2 Datasheet (PDF)
bsm25gd120dn2.pdf
BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm25gd120dn2 e3224.pdf
BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage
bsm25gal120dn2.pdf
BSM 25 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200
bsm25gb120dn2.pdf
BSM 25 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
Otros transistores... BSM200GB120DLC , BSM200GB120DN2 , BSM200GB170DLC , BSM200GB60DLC , BSM200GD60DLC , BSM20GD60DLC_E3224 , BSM25GAL120DN2 , BSM25GB120DN2 , IRG4PF50W , BSM25GD120DN2_E3224 , BSM300GA120DLC , BSM300GA120DLCS , BSM300GA120DN2 , BSM300GA120DN2S , BSM300GA170DLC , BSM300GA170DN2 , BSM300GA170DN2E3166 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2