IRG4P254S Todos los transistores

 

IRG4P254S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4P254S

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200

Tensión colector-emisor (Vce): 250

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 55

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247AC

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IRG4P254S Datasheet (PDF)

1.1. irg4p254s.pdf Size:129K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4P254S I T D T I T I T Standard Speed IGBT Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 250V voltage and operating frequencies up to 10kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry stand

5.1. irg4ph40u.pdf Size:166K _international_rectifier

IRG4P254S
IRG4P254S

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous gene

5.2. irg4psh71kd.pdf Size:198K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91688A IRG4PSH71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible VCES = 1200V with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for VCE(on) typ. = 2.97V motorcontrol G • Minimum switching losses com

 5.3. irg4pc50w.pdf Size:159K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PC50W I T D T I T I T C Features Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, I

5.4. irg4pc30kd.pdf Size:184K _international_rectifier

IRG4P254S
IRG4P254S

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.21V • Combines low conduction losses with high G switchin

 5.5. irg4ph40k.pdf Size:160K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PH40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.74V G switching speed • Latest generation design provi

5.6. irg4ph40ud2-e.pdf Size:299K _international_rectifier

IRG4P254S
IRG4P254S

PD - 96781A IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast VCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use in G resonant circuits • Indus

5.7. irg4pf50w.pdf Size:132K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E • Latest technology IGB

5.8. irg4pc40s.pdf Size:148K _international_rectifier

IRG4P254S
IRG4P254S

 D I I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry stan

5.9. irg4psh71ud.pdf Size:326K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Copack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz VCES = 1200V in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.52V G parameter distribution and higher effi

5.10. irg4ph20k.pdf Size:152K _international_rectifier

IRG4P254S
IRG4P254S

PD -91776 IRG4PH20K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 3.17V G switching speed • Latest generation design provides tighter parameter @VGE = 15V, IC = 5

5.11. irg4ph30k.pdf Size:164K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PH30K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 3.10V G switching speed • Latest generation design provi

5.12. irg4pc30f.pdf Size:150K _international_rectifier

IRG4P254S
IRG4P254S

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE

5.13. irg4pc20u.pdf Size:693K _international_rectifier

IRG4P254S
IRG4P254S

PD - 97289 IRG4PC20UPbF UltraFast Speed IGBT PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.85V G • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 6.5A E Generatio

5.14. irg4psc71ud.pdf Size:248K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter VCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) than VCE(on) typ. = 1.67V prior generations G • IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov

5.15. irg4ph20kd.pdf Size:193K _international_rectifier

IRG4P254S
IRG4P254S

PD- 91777 IRG4PH20KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V VCE(on) typ. = 3.17V • Combines low conduction losses with high G switching speed @VGE = 15V, IC = 5.0A • Tighter para

5.16. irg4pc50fd.pdf Size:214K _international_rectifier

IRG4P254S
IRG4P254S

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V • Generation 4 IGBT design provides tighter G parameter distribution and high

5.17. irg4pf50wd.pdf Size:253K _international_rectifier

IRG4P254S
IRG4P254S

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, I

5.18. irg4ph50s.pdf Size:126K _international_rectifier

IRG4P254S
IRG4P254S

 PD -91712A IRG4PH50S I T D T I T I T I T Features Features Features Features Features C • Standard: Optimized for minimum saturation VCES =1200V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.47V G Generation 3 • Industry sta

5.19. irg4psh71k.pdf Size:136K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 1200V • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 2.97V • High short circuit rating IGBTs, optimized for G motorcontrol • Minimum switching losses combined with low @VGE = 15V, IC = 42A

5.20. irg4pc40u.pdf Size:153K _international_rectifier

IRG4P254S
IRG4P254S

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3

5.21. irg4pc30fd.pdf Size:216K _international_rectifier

IRG4P254S
IRG4P254S

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and high

5.22. irg4ph40s.pdf Size:127K _international_rectifier

IRG4P254S
IRG4P254S

PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at VCES = 1200V 5.0A • Extremely low VCE(on) variation from lot to lot • Industry standard TO-247AC package VCE(on) typ. = 1.46V G @VGE = 15V, IC = 20A E N-channel Benefits • High current density systems • Optimized for specific app

5.23. irg4pc30k.pdf Size:127K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed • Latest generation design

5.24. irg4pc40kd.pdf Size:188K _international_rectifier

IRG4P254S
IRG4P254S

PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design pro

5.25. irg4pc40w.pdf Size:119K _international_rectifier

IRG4P254S
IRG4P254S

PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E • Low IGBT conduction losses

5.26. irg4pc30u.pdf Size:151K _international_rectifier

IRG4P254S
IRG4P254S

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3

5.27. irg4pc60u.pdf Size:126K _international_rectifier

IRG4P254S
IRG4P254S

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. • Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G • Generation 4 IGBT design provides tighter parameter distribution and hig

5.28. irg4pc30ud.pdf Size:216K _international_rectifier

IRG4P254S
IRG4P254S

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

5.29. irg4psc71kd.pdf Size:191K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91684A IRG4PSC71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible VCES = 600V with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for VCE(on) typ. = 1.83V motorcontrol G • Minimum switching losses comb

5.30. irg4ph50s-e.pdf Size:220K _international_rectifier

IRG4P254S
IRG4P254S

 PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation VCES =1200V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.47V G Generation 3 • Industry standard TO-247AC package @VGE = 15V,

5.31. irg4psh71u.pdf Size:271K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating VCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.50V G parameter distribution and higher efficiency (minimum switching and conduct

5.32. irg4pc30s.pdf Size:125K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry sta

5.33. auirg4ph50s.pdf Size:295K _international_rectifier

IRG4P254S
IRG4P254S

AUTOMOTIVE GRADE AUIRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features IC = 81A@ TC = 100°C • Standard: Optimized for minimum saturation G voltage and low operating frequencies (< 1kHz) VCE(on) typ. = 1.47V@ 33A • Generation 4 IGBT design provides tighter E parameter distribution and higher efficiency n-channel • Industry standard TO-247AC package • Lead

5.34. irg4ph50kd.pdf Size:227K _international_rectifier

IRG4P254S
IRG4P254S

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V VCE(on) typ. = 2.77V • Combines low conduction losses with high G switching speed

5.35. irg4pc60upbf.pdf Size:231K _international_rectifier

IRG4P254S
IRG4P254S

PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15

5.36. auirg4pc40s-e.pdf Size:408K _international_rectifier

IRG4P254S
IRG4P254S

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G  Standard: Optimized for minimum saturation voltage E and low operating frequencies ( < 1kHz) @ VGE = 15V, IC = 31A n-channel  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry

5.37. irg4pc60f-p.pdf Size:118K _international_rectifier

IRG4P254S
IRG4P254S

PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A

5.38. irg4ph50k.pdf Size:68K _international_rectifier

IRG4P254S
IRG4P254S

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distr

5.39. irg4pc50s.pdf Size:167K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry st

5.40. irg4ph40ud.pdf Size:339K _international_rectifier

IRG4P254S
IRG4P254S

PD- 91621C IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V • New IGBT design provides tighter G parameter distribution and higher efficiency than previous generat

5.41. irg4pc30w.pdf Size:121K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PC30W I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

5.42. irg4pc60f.pdf Size:221K _international_rectifier

IRG4P254S
IRG4P254S

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15V, IC = 60A

5.43. irg4psc71k.pdf Size:280K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91683B IRG4PSC71K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 600V • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 1.83V • High abort circuit rating IGBTs, optimized for G motorcontrol • Minimum switching losses combined with low @VGE = 15V, IC = 60A E conduction

5.44. irg4pc50u.pdf Size:153K _international_rectifier

IRG4P254S
IRG4P254S

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3

5.45. irg4pc40fd.pdf Size:224K _international_rectifier

IRG4P254S
IRG4P254S

PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V • Generation 4 IGBT design provides tighter G parameter distribution and high

5.46. irg4ph40kd.pdf Size:219K _international_rectifier

IRG4P254S
IRG4P254S

PD- 91577B IRG4PH40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V VCE(on) typ. = 2.74V • Combines low conduction losses with high G switching speed

5.47. irg4pc40k.pdf Size:125K _international_rectifier

IRG4P254S
IRG4P254S

 D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design provides higher efficiency G than Ge

5.48. irg4pc50f.pdf Size:152K _international_rectifier

IRG4P254S
IRG4P254S

 D I I T I T D T I T I T Features C Features Features Features Features • Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

5.49. irg4ph30kd.pdf Size:215K _international_rectifier

IRG4P254S
IRG4P254S

PD- 91579A IRG4PH30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 1200V tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V VCE(on) typ. = 3.10V • Combines low conduction losses with high G switching speed

5.50. irg4pc50kd.pdf Size:31K _international_rectifier

IRG4P254S
IRG4P254S

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher

5.51. irg4pc50s-p.pdf Size:144K _international_rectifier

IRG4P254S
IRG4P254S

 D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry

5.52. irg4pc60u-p.pdf Size:122K _international_rectifier

IRG4P254S
IRG4P254S

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. • Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G • Generation 4 IGBT design provides tighter parameter distribution and hig

5.53. irg4pc40ud.pdf Size:238K _international_rectifier

IRG4P254S
IRG4P254S

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V • Generation 4 IGBT design provides tighter G parameter distribution a

5.54. irg4pc50k.pdf Size:121K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design

5.55. irg4pc40f.pdf Size:150K _international_rectifier

IRG4P254S
IRG4P254S

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE

5.56. irg4psc71u.pdf Size:141K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating VCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.67V G parameter distribution and higher efficiency (minimum switching and conduct

5.57. irg4ph50u.pdf Size:137K _international_rectifier

IRG4P254S
IRG4P254S

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous gener

5.58. irg4pc50ud.pdf Size:219K _international_rectifier

IRG4P254S
IRG4P254S

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V • Generation 4 IGBT design provides tighter G parameter distribution an

5.59. irg4ph50ud.pdf Size:229K _international_rectifier

IRG4P254S
IRG4P254S

PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V • New IGBT design provides tighter G parameter distribution and hi

Otros transistores... IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4PC50FD , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W .

 

 
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Recientemente añadidas las descripciónes de los transistores

IGBT: FMG2G400US60 | NGD8201AN | MSG50N350FH | GT15Q102 | PSTG75HST12 | PSTG50HST12 | PSTG25HTT12 | PSTG25HDT12 | PS21265-P | PS21265-AP |

 

 

 
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