All IGBT. IRG4P254S Datasheet

 

IRG4P254S Datasheet and Replacement


   Type Designator: IRG4P254S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 98 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.32 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 510 pF
   Qgⓘ - Total Gate Charge, typ: 200 nC
   Package: TO247AC
      - IGBT Cross-Reference

 

IRG4P254S Datasheet (PDF)

 ..1. Size:129K  international rectifier
irg4p254s.pdf pdf_icon

IRG4P254S

D IRG4P254SI T D T I T I T Standard Speed IGBTFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 250V voltage and operating frequencies up to 10kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.32VG Generation 3 Industry stand

 9.1. Size:150K  international rectifier
irg4pc30f.pdf pdf_icon

IRG4P254S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE

 9.2. Size:339K  international rectifier
irg4ph40ud.pdf pdf_icon

IRG4P254S

PD- 91621CIRG4PH40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.43V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generat

 9.3. Size:153K  international rectifier
irg4pc50u.pdf pdf_icon

IRG4P254S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

Datasheet: IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , RJP6065DPM , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W .

History: IHW20N120R5 | APT100GT60JRDL

Keywords - IRG4P254S transistor datasheet

 IRG4P254S cross reference
 IRG4P254S equivalent finder
 IRG4P254S lookup
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 IRG4P254S replacement

 

 
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