BSM75GAL120DN2 Todos los transistores

 

BSM75GAL120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM75GAL120DN2
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 625
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 105
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 70
   Capacitancia de salida (Cc), typ, pF: 800
   Paquete / Cubierta: MODULE

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BSM75GAL120DN2 Datasheet (PDF)

 ..1. Size:85K  eupec
bsm75gal120dn2.pdf

BSM75GAL120DN2
BSM75GAL120DN2

BSM 75 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GAL 120 DN2 1200V 105A HALF BRIDGE GAL 1 C67076-A2011-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =

 8.1. Size:153K  eupec
bsm75gp60.pdf

BSM75GAL120DN2
BSM75GAL120DN2

Technische Information / Technical InformationIGBT-ModuleBSM75GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 60 ARMS forward current per chip Dauergl

 8.2. Size:139K  eupec
bsm75gb120dlc.pdf

BSM75GAL120DN2
BSM75GAL120DN2

Technische Information / Technical InformationIGBT-ModuleBSM75GB120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj= 25 C VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 170 APeriodischer Kollektor Sp

 8.3. Size:207K  eupec
bsm75gb120dn2.pdf

BSM75GAL120DN2
BSM75GAL120DN2

BSM 75 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GB 120 DN2 1200V 105A HALF-BRIDGE 1 C67076-A2106-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 8.4. Size:285K  eupec
bsm75gd120dn2.pdf

BSM75GAL120DN2
BSM75GAL120DN2

BSM 75 GD 120 DN2IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k

 8.5. Size:104K  eupec
bsm75gd120dlc.pdf

BSM75GAL120DN2
BSM75GAL120DN2

Technische Information / Technical InformationIGBT-ModuleBSM75GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 125 APeriodischer Kollektor Spitzenstrom

 8.6. Size:123K  eupec
bsm75gb60dlc.pdf

BSM75GAL120DN2
BSM75GAL120DN2

Technische Information / Technical InformationIGBT-ModuleBSM 75 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 75C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 100 APeriodischer Kollektor Spitzenstrom

 8.7. Size:211K  eupec
bsm75gd60dlc.pdf

BSM75GAL120DN2
BSM75GAL120DN2

Technische Information / Technical InformationIGBT-ModuleBSM 75 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC = 70 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 95 APeriodischer Kollektor Spitzenstro

 8.8. Size:210K  eupec
bsm75gb170dn2.pdf

BSM75GAL120DN2
BSM75GAL120DN2

BSM 75 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 22 OhmType VCE IC Package Ordering CodeBSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700Ga

Otros transistores... BSM35GP120G , BSM400GA120DLC , BSM400GA120DLCS , BSM400GA120DN2 , BSM400GA120DN2S , BSM400GA170DLC , BSM600GA120DLC , BSM600GA120DLCS , MBQ60T65PES , BSM75GB120DLC , BSM75GB120DN2 , BSM75GB170DN2 , BSM75GB60DLC , BSM75GD120DLC , BSM75GD120DN2 , BSM75GD60DLC , BSM75GP60 .

 

 
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BSM75GAL120DN2
  BSM75GAL120DN2
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Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
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