BSM75GD120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM75GD120DN2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 520 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 103 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 720 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
BSM75GD120DN2 Datasheet (PDF)
bsm75gd120dn2.pdf

BSM 75 GD 120 DN2IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k
bsm75gd120dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM75GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 125 APeriodischer Kollektor Spitzenstrom
bsm75gd60dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 75 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC = 70 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 95 APeriodischer Kollektor Spitzenstro
bsm75gp60.pdf

Technische Information / Technical InformationIGBT-ModuleBSM75GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 60 ARMS forward current per chip Dauergl
Otros transistores... BSM600GA120DLC , BSM600GA120DLCS , BSM75GAL120DN2 , BSM75GB120DLC , BSM75GB120DN2 , BSM75GB170DN2 , BSM75GB60DLC , BSM75GD120DLC , SGT40N60NPFDPN , BSM75GD60DLC , BSM75GP60 , CM1000DUC-34SA , CM1000DXL-24S , CM100DU-12F , CM100DU-24F , CM100DU-24NFH , CM100DY-24A .
History: GT80J101 | APTGF25X120E2 | BLG40T120FUH-F | MMG150S120B6TN | APTLGF210U120T | SGT20T60SD1T
History: GT80J101 | APTGF25X120E2 | BLG40T120FUH-F | MMG150S120B6TN | APTLGF210U120T | SGT20T60SD1T



Liste
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