BSM75GP60 Todos los transistores

 

BSM75GP60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM75GP60
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 65 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

BSM75GP60 Datasheet (PDF)

 ..1. Size:153K  eupec
 bsm75gp60.pdf pdf_icon

BSM75GP60

Technische Information / Technical InformationIGBT-ModuleBSM75GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 60 ARMS forward current per chip Dauergl

 8.1. Size:139K  eupec
 bsm75gb120dlc.pdf pdf_icon

BSM75GP60

Technische Information / Technical InformationIGBT-ModuleBSM75GB120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj= 25 C VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 170 APeriodischer Kollektor Sp

 8.2. Size:207K  eupec
 bsm75gb120dn2.pdf pdf_icon

BSM75GP60

BSM 75 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GB 120 DN2 1200V 105A HALF-BRIDGE 1 C67076-A2106-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 8.3. Size:285K  eupec
 bsm75gd120dn2.pdf pdf_icon

BSM75GP60

BSM 75 GD 120 DN2IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGP10NB60S

 

 
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