CM100DY-24NF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM100DY-24NF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 650 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 2000 pF
Qgⓘ - Carga total de la puerta, typ: 675 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM100DY-24NF - IGBT
CM100DY-24NF Datasheet (PDF)
cm100du-12f.pdf
CM100DU-12FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/600 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis
cm100du-24f.pdf
CM100DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/1200 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2 FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis
cm100du-24nfh.pdf
CM100DU-24NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTwww.pwrx.comNFH-Series Module100 Amperes/1200 VoltsTC MEASUREMENT POINTAN DM K KFEC2E1 E2 C1SB H GFRJP - NUTS (3 TYP) UQ - (2 TYP)Description:Powerex IGBT Modules are designed for use in high frequency applications; 30 kHz W W W Wfor hard switchi
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2