CM1200E4C-34N Todos los transistores

 

CM1200E4C-34N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM1200E4C-34N
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 6500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 400 nS
   Coesⓘ - Capacitancia de salida, typ: 9600 pF
   Qgⓘ - Carga total de la puerta, typ: 6800 nC
   Paquete / Cubierta: MODULE
 

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CM1200E4C-34N Datasheet (PDF)

 ..1. Size:173K  1
 cm1200e4c-34n.pdf pdf_icon

CM1200E4C-34N

MITSUBISHI HVIGBT MODULESCM1200E4C-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench

 8.1. Size:453K  1
 cm1200dc-34n.pdf pdf_icon

CM1200E4C-34N

CM1200DC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comHVIGBT Module1200 Amperes/1700 VoltsADDUK (4 TYP)42QFBC EY3 1Description:E1 Z E2Powerex IGBTMOD Modules AA VG1 G2 M (3 TYP) are designed for use in switching Wapplications. Each module consists C1 C2of two IGBT Transistors in

 8.2. Size:446K  1
 cm1200hcb-34n.pdf pdf_icon

CM1200E4C-34N

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

 8.3. Size:44K  1
 cm1200ha-66h.pdf pdf_icon

CM1200E4C-34N

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind

MOSTRAR MÁS

Otros transistores... CM100TL-24NF , CM100TU-12F , CM100TU-24F , CM100TX-24S , CM100TX-24S1 , CM10MD-24H , CM1200DB-34N , CM1200DC-34N , GT45F122 , CM1200HA-34H , CM1200HA-50H , CM1200HA-66H , CM1200HB-50H , CM1200HB-66H , CM1200HC-34H , CM1200HC-50H , CM1200HC-66H .

History: MIXD80PM650TMI | IXSM30N60 | IXEN60N120 | IRG4BC30K | SII75N06 | MKI100-12F8 | SPM1006

 

 
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