CM1200HA-50H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM1200HA-50H
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 10400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 2500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 2000 nS
Coesⓘ - Capacitancia de salida, typ: 13200 pF
Qgⓘ - Carga total de la puerta, typ: 5400 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM1200HA-50H - IGBT
CM1200HA-50H Datasheet (PDF)
cm1200ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm1200hcb-34n.pdf
CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES
cm1200hb-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC c
cm1200hc-50h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm1200hc-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm1200hg-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateA
cm1200hc-34h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover
Otros transistores... CM100TU-24F , CM100TX-24S , CM100TX-24S1 , CM10MD-24H , CM1200DB-34N , CM1200DC-34N , CM1200E4C-34N , CM1200HA-34H , TGAN60N60F2DS , CM1200HA-66H , CM1200HB-50H , CM1200HB-66H , CM1200HC-34H , CM1200HC-50H , CM1200HC-66H , CM1200HCB-34N , CM1200HG-66H .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2