CM1200HA-50H - Аналоги. Основные параметры
Наименование: CM1200HA-50H
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ -
Максимальная рассеиваемая мощность: 10400
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 2500
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic| ⓘ - Максимальный постоянный ток коллектора:
1200
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
3.2
V @25℃
Tj ⓘ - Максимальная температура перехода:
150
℃
tr ⓘ -
Время нарастания типовое: 2000
nS
Coesⓘ - Выходная емкость, типовая: 13200
pF
Тип корпуса: MODULE
Аналог (замена) для CM1200HA-50H
-
подбор ⓘ IGBT транзистора по параметрам
Технические параметры CM1200HA-50H
5.1. Size:44K 1
cm1200ha-66h.pdf 
MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Ind
7.2. Size:50K 1
cm1200hb-66h.pdf 
MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC c
7.3. Size:71K 1
cm1200hc-50h.pdf 
MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction
7.4. Size:183K 1
cm1200hc-66h.pdf 
MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction
7.6. Size:203K 1
cm1200hg-66h.pdf 
MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate A
7.7. Size:179K 1
cm1200hc-34h.pdf 
MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover
Другие IGBT... CM100TU-24F
, CM100TX-24S
, CM100TX-24S1
, CM10MD-24H
, CM1200DB-34N
, CM1200DC-34N
, CM1200E4C-34N
, CM1200HA-34H
, RJH30E2DPP
, CM1200HA-66H
, CM1200HB-50H
, CM1200HB-66H
, CM1200HC-34H
, CM1200HC-50H
, CM1200HC-66H
, CM1200HCB-34N
, CM1200HG-66H
.
History: MG12150D-BA1MM
