CM1200HC-66H Todos los transistores

 

CM1200HC-66H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM1200HC-66H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 14700 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 1000 nS
   Coesⓘ - Capacitancia de salida, typ: 18000 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

CM1200HC-66H Datasheet (PDF)

 ..1. Size:183K  1
 cm1200hc-66h.pdf pdf_icon

CM1200HC-66H

MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 5.1. Size:71K  1
 cm1200hc-50h.pdf pdf_icon

CM1200HC-66H

MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 5.2. Size:179K  1
 cm1200hc-34h.pdf pdf_icon

CM1200HC-66H

MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

 6.1. Size:446K  1
 cm1200hcb-34n.pdf pdf_icon

CM1200HC-66H

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

MOSTRAR MÁS

Otros transistores... CM1200E4C-34N , CM1200HA-34H , CM1200HA-50H , CM1200HA-66H , CM1200HB-50H , CM1200HB-66H , CM1200HC-34H , CM1200HC-50H , TGAN60N60F2DS , CM1200HCB-34N , CM1200HG-66H , CM1400DU-24NF , CM1400DUC-24S , CM150DU-12F , CM150DU-12H , CM150DU-24F , CM150DU-24NFH .

History: IXXX160N65B4 | IRG4PC30FPBF | APT40GP60B2DF2 | IXGH40N120A2 | MMG300D060B6TC | GT5G102LB | NTE3310

 

 
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