CM1200HCB-34N Todos los transistores

 

CM1200HCB-34N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM1200HCB-34N
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 8600 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 600 nS
   Coesⓘ - Capacitancia de salida, typ: 12000 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

CM1200HCB-34N Datasheet (PDF)

 ..1. Size:446K  1
cm1200hcb-34n.pdf pdf_icon

CM1200HCB-34N

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

 6.1. Size:71K  1
cm1200hc-50h.pdf pdf_icon

CM1200HCB-34N

MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 6.2. Size:183K  1
cm1200hc-66h.pdf pdf_icon

CM1200HCB-34N

MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 6.3. Size:179K  1
cm1200hc-34h.pdf pdf_icon

CM1200HCB-34N

MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

Otros transistores... CM1200HA-34H , CM1200HA-50H , CM1200HA-66H , CM1200HB-50H , CM1200HB-66H , CM1200HC-34H , CM1200HC-50H , CM1200HC-66H , JT075N065WED , CM1200HG-66H , CM1400DU-24NF , CM1400DUC-24S , CM150DU-12F , CM150DU-12H , CM150DU-24F , CM150DU-24NFH , CM150DX-24A .

History: JNG20T60HS | IRG7RC10FD | IRG4PC30FPBF | FF200R12KT3 | CM1200DC-34N | APT200GN60J | DAZF100G120XCA

 

 
Back to Top

 


 
.