CM1200HG-66H Todos los transistores

 

CM1200HG-66H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM1200HG-66H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 13800 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 1000 nS
   Coesⓘ - Capacitancia de salida, typ: 18000 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

CM1200HG-66H Datasheet (PDF)

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 cm1200hg-66h.pdf pdf_icon

CM1200HG-66H

MITSUBISHI HVIGBT MODULESCM1200HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateA

 7.1. Size:446K  1
 cm1200hcb-34n.pdf pdf_icon

CM1200HG-66H

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

 7.2. Size:44K  1
 cm1200ha-66h.pdf pdf_icon

CM1200HG-66H

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind

 7.3. Size:50K  1
 cm1200hb-66h.pdf pdf_icon

CM1200HG-66H

MITSUBISHI HVIGBT MODULESCM1200HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC c

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: CM100DU-12F | FGH40T65SHDF | MIAA10WE600TMH | 6MBP150VDA060-50 | APTGF90SK60D1 | APT35GP120B | FGH75T65SHDTLN4

 

 
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