CM150DU-12F Todos los transistores

 

CM150DU-12F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CM150DU-12F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 520 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Coesⓘ - Capacitancia de salida, typ: 2700 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

CM150DU-12F Datasheet (PDF)

 ..1. Size:84K  powerex
cm150du-12f.pdf pdf_icon

CM150DU-12F

CM150DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD150 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K Japplications. Each module consistsRof two IGBT Transisto

 4.1. Size:41K  powerex
cm150du-12h.pdf pdf_icon

CM150DU-12F

CM150DU-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODU-Series Module150 Amperes/600 VoltsTC Measured PointAE BF G H U JC2E1 E2 C1D 2 - MountingHoles CVK(6.5 Dia.)LDescription:MN3-M5 Nuts Powerex IGBTMOD ModulesO O are designed for use in switching0.110 - 0.5 TabP Q P applications. Each m

 6.1. Size:136K  1
cm150du-24f.pdf pdf_icon

CM150DU-12F

CM150DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD150 Amperes/1200 VoltsAT - (4 TYP.)DTC MEASURED POINTU (4 PLACES)G2HE2CJB E LCMC2E1 E2 C1E1HG1Description:GPowerex IGBTMOD Modules Q Q P NS - NUTS are designed for use in switching (3 TYP)applications. Each m

 6.2. Size:207K  1
cm150du-24nfh.pdf pdf_icon

CM150DU-12F

MITSUBISHI IGBT MODULESCM150DU-24NFHHIGH POWER SWITCHING USECM150DU-24NFHIC ...................................................................150AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NGD15N41A | NCE40TD135LP | IGB20N65S5 | IRG4BC20KD | 2MBI300NB-060 | NCE75ED120VT4 | JNG20T60PS

 

 
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