IRG4PC30UD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PC30UD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 73 pF

Encapsulados: TO247AC

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IRG4PC30UD datasheet

 ..1. Size:216K  international rectifier
 irg4pc30ud.pdf pdf_icon

IRG4PC30UD

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an

 0.1. Size:385K  international rectifier
 irg4pc30udpbf.pdf pdf_icon

IRG4PC30UD

PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation

 5.1. Size:151K  international rectifier
 irg4pc30u.pdf pdf_icon

IRG4PC30UD

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3

 6.1. Size:150K  international rectifier
 irg4pc30f.pdf pdf_icon

IRG4PC30UD

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE

MOSTRAR MÁS

Otros transistores... IRG4IBC30W, IRG4P254S, IRG4PC30F, IRG4PC30FD, IRG4PC30K, IRG4PC30KD, IRG4PC30S, IRG4PC30U, FGH60N60SMD, IRG4PC30W, IRG4PC40F, IRG4PC40FD, IRG4PC40K, IRG4PC40KD, IRG4PC40S, IRG4PC40U, IRG4PC40UD