IRG4PC30UD
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG4PC30UD
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 100
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
23
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.95
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 21
nS
Coesⓘ - Выходная емкость, типовая: 73
pF
Qgⓘ - Общий заряд затвора, typ: 50
nC
Тип корпуса:
TO247AC
Аналог (замена) для IRG4PC30UD
IRG4PC30UD
Datasheet (PDF)
..1. Size:216K international rectifier
irg4pc30ud.pdf 
PD 91462BIRG4PC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an
0.1. Size:385K infineon
irg4pc30udpbf.pdf 
PD - 95327IRG4PC30UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHzin resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation
5.1. Size:151K international rectifier
irg4pc30u.pdf 
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3
6.1. Size:150K international rectifier
irg4pc30f.pdf 
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE
6.2. Size:184K international rectifier
irg4pc30kd.pdf 
PD -91587AIRG4PC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switchin
6.3. Size:216K international rectifier
irg4pc30fd.pdf 
PD 91460BIRG4PC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and high
6.4. Size:125K international rectifier
irg4pc30s.pdf 
D IRG4PC30S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
6.5. Size:127K international rectifier
irg4pc30k.pdf 
D IRG4PC30KShort Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design
6.6. Size:121K international rectifier
irg4pc30w.pdf 
D IRG4PC30WI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC
6.7. Size:269K infineon
irg4pc30fpbf.pdf 
PD -94920IRG4PC30FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 17AE Industry stan
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