CM1800DY-34S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM1800DY-34S
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 11535 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 200 nS
Coesⓘ - Capacitancia de salida, typ: 48000 pF
Qgⓘ - Carga total de la puerta, typ: 8400 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM1800DY-34S IGBT
CM1800DY-34S Datasheet (PDF)
cm1800dy-34s.pdf

CM1800DY-34SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.comIGBT HVIGBT Series Module1800 Amperes/1700 VoltsAAN ASAPAQ H (12 PLACES)XARG YE2 G2 C2F J (18 PLACES)FPLSE2 E2 LC2E1D VC BC2E1C1 C1AALLKQ AVK K TE FW ABF G1 E1 C1P URAWFATAU ADNM (8 PLACES)AC
cm1800hc-34h.pdf

MITSUBISHI HVIGBT MODULESCM1800HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1800HC-34H IC ................................................................ 1800A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover
cm1800hcb-34n.pdf

CM1800HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1800 A VCES
cm1800hc-34n.pdf

CM1800HC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Single IGBTMODHVIGBT Module1800 Amperes/1700 VoltsADD UK (4 TYP)42 FBVCE3 1Description:Powerex IGBTMOD Modules Care designed for use in switching E GM (3 TYP)applications. Each module consists Wof one IGBT Transistor in a reverse-connected super-fast L
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: ATT050K065FQC | LEGM200BA120L2H | 2MBI150N-120 | CM100MXA-24S | IXGH60N60C2 | AOK50B65M2 | 2MBI100NB-120
History: ATT050K065FQC | LEGM200BA120L2H | 2MBI150N-120 | CM100MXA-24S | IXGH60N60C2 | AOK50B65M2 | 2MBI100NB-120



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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