All IGBT. CM1800DY-34S Datasheet

 

CM1800DY-34S IGBT. Datasheet pdf. Equivalent


   Type Designator: CM1800DY-34S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 11535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1800 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 48000 pF
   Qgⓘ - Total Gate Charge, typ: 8400 nC
   Package: MODULE

 CM1800DY-34S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM1800DY-34S Datasheet (PDF)

 ..1. Size:1095K  1
cm1800dy-34s.pdf

CM1800DY-34S
CM1800DY-34S

CM1800DY-34SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual Half-Bridge www.pwrx.comIGBT HVIGBT Series Module1800 Amperes/1700 VoltsAAN ASAPAQ H (12 PLACES)XARG YE2 G2 C2F J (18 PLACES)FPLSE2 E2 LC2E1D VC BC2E1C1 C1AALLKQ AVK K TE FW ABF G1 E1 C1P URAWFATAU ADNM (8 PLACES)AC

 8.1. Size:181K  1
cm1800hc-34h.pdf

CM1800DY-34S
CM1800DY-34S

MITSUBISHI HVIGBT MODULESCM1800HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1800HC-34H IC ................................................................ 1800A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

 8.2. Size:320K  1
cm1800hcb-34n.pdf

CM1800DY-34S
CM1800DY-34S

CM1800HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1800 A VCES

 8.3. Size:519K  1
cm1800hc-34n.pdf

CM1800DY-34S
CM1800DY-34S

CM1800HC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Single IGBTMODHVIGBT Module1800 Amperes/1700 VoltsADD UK (4 TYP)42 FBVCE3 1Description:Powerex IGBTMOD Modules Care designed for use in switching E GM (3 TYP)applications. Each module consists Wof one IGBT Transistor in a reverse-connected super-fast L

Datasheet: CM150RXL-34SA , CM150TL-12NF , CM150TL-24NF , CM150TU-12F , CM150TX-24S , CM150TX-24S1 , CM15TF-12H , CM1600HC-34H , IRG4PC50UD , CM1800HC-34H , CM1800HC-34N , CM1800HCB-34N , CM200DU-12F , CM200DU-12NFH , CM200DU-24F , CM200DU-24NFH , CM200DX-24S .

 

 
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