CM200EXS-34SA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM200EXS-34SA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 2000
Tensión máxima colector-emisor |Vce|, V: 1700
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 200
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 100
Capacitancia de salida (Cc), typ, pF: 4300
Carga total de la puerta (Qg), typ, nC: 1100
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM200EXS-34SA - IGBT
CM200EXS-34SA Datasheet (PDF)
wcm2007.pdf
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WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl
wcm2002.pdf
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wcm2001.pdf
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WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo
cm200dy-12h.pdf
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CM200DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/600 VoltsABH E E HSC2E1 E2 C1GC KSLDescription:R - M5 THD (3 TYP.)Powerex IGBTMOD ModulesP - DIA. (2 TYP.)are designed for use in switching.110 TABJ J Japplications. Each module consistsN Nof two IGBT Transistors
cm200tu-12f.pdf
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CM200TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD200 Amperes/600 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesLLLare designed
cm200du-12f.pdf
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CM200DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K JRapplications. Each module consistsof two IGBT Transisto
cm200dy-12nf.pdf
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CM200DY-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODNF-Series Module200 Amperes/600 VoltsTC MEASURED POINT(BASEPLATE)AF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GDescription:Powerex IGBTMOD ModulesK K Kare designed for use in switchingM NUTS LD(3 PLACES)(2 PLACES) applications. Each module co
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![CM200EXS-34SA](https://alltransistors.com/images/us.png)
![CM200EXS-34SA](https://alltransistors.com/images/es.png)
![CM200EXS-34SA](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores
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