CM200EXS-34SA - аналоги и описание IGBT

MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE CM200E3U-24F IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 0.25 4 14 14 14 Tc measured point CM C2

MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 J C D P Description K Mitsubishi IGBT Modules are de- R Q - M6 THD N - DIA. signed for use in switching applica- (3 TYP.) (4 TYP.) tions. Each module consists of two TAB#110 t=0.5 IGBTs in a half-bridge configuration M L with each transistor having a re- M verse-conne

MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM200HG-130H IC ..................................................................200 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

CM200DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts A T - (4 TYP.) D TC MEASURED POINT U (4 PLACES) G2 H E2 C J B E L CM C2E1 E2 C1 E1 H G1 Description G Powerex IGBTMOD Modules Q Q P N S - NUTS are designed for use in switching (3 TYP) applications. Each m

CM200DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/1400 Volts A B F F G P C2E1 E2 C1 J C D P Description K Powerex IGBTMOD Modules R Q - M6 THD N - DIA. are designed for use in switching (3 TYP.) (4 TYP.) applications. Each module consists .110 TAB M of two IGBT Transistors in a

CM200DU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NFH-Series Module 200 Amperes/600 Volts TC MEASUREMENT POINT A N D M K K F E C2E1 E2 C1 S B H G F R J P - NUTS (3 TYP) U Q - (2 TYP) Description Powerex IGBT Modules are de- signed for use in high frequency applications; 30 kHz W W W W for hard switchi

MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE CM200DU-24NFH IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTL

CM200RL-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD + Brake NF-Series Module 200 Amperes/600 Volts A D E F H H E G G G M K N L W V U E V AB CN B G B X 1 8 C N G AC X J WP VP UP P G Description W P 1 1 1 Powerex IGBTMOD Modules E are designed for use in switching R S S K applications. Each m

CM200DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com A-Series Module 200 Amperes/1200 Volts A F F E E G2 E2 G B J N H C2E1 E2 C1 E1 G1 G K K K M NUTS Description L D (3 PLACES) (2 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK P P P applications. Each module Q Q U W

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http //www.sh-willsemi.com V(BR)DSS RDS(on) Typical. ( ) 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S2 6 5 4 The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

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WCM2001 WCM2001 N- and P-Channel Complementary, 20V, MOSFET Http //www.willsemi.com V(BR)DSS RDS(on) Typ. ( m ) 180 @ 4.5V N-Channel 225 @ 2.5V 20 V 280 @ 1.8V 85 @ -4.5V P-Channel 110 @ -2.5V -20 V 150 @ -1.8V D1 G2 S2 6 5 4 Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3 package for DC-DC converter or Lo

CM200DY-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/600 Volts A B H E E H S C2E1 E2 C1 G C K S L Description R - M5 THD (3 TYP.) Powerex IGBTMOD Modules P - DIA. (2 TYP.) are designed for use in switching .110 TAB J J J applications. Each module consists N N of two IGBT Transistors

CM200TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts J T (4 TYP.) K S - NUTS (5 TYP) K R CM N P P GUP EUP GVP EVP GWP EWP L N L N L B E Q M GUN EUN GVN EVN GWN EWN TC TC MEASURING MEASURING POINT U V W POINT Description J J Powerex IGBTMOD Modules LLL are designed

CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts P - NUTS (3 PLACES) TC MEASURING POINT A N D Q (2 PLACES) E C2E1 E2 C1 F B G H F Description Powerex IGBTMOD Modules are designed for use in switching M K K J R applications. Each module consists of two IGBT Transisto

CM200DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 200 Amperes/600 Volts TC MEASURED POINT (BASEPLATE) A F F E E G2 E2 G B J N H C2E1 E2 C1 E1 G1 G Description Powerex IGBTMOD Modules K K K are designed for use in switching M NUTS L D (3 PLACES) (2 PLACES) applications. Each module co