IRG4PC50FD Todos los transistores

 

IRG4PC50FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4PC50FD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 250 pF
   Qgⓘ - Carga total de la puerta, typ: 190 nC
   Paquete / Cubierta: TO247AC
 

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IRG4PC50FD Datasheet (PDF)

 ..1. Size:214K  international rectifier
 irg4pc50fd.pdf pdf_icon

IRG4PC50FD

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

 5.1. Size:152K  international rectifier
 irg4pc50f.pdf pdf_icon

IRG4PC50FD

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

 5.2. Size:323K  international rectifier
 irg4pc50f-e.pdf pdf_icon

IRG4PC50FD

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

 5.3. Size:310K  international rectifier
 irg4pc50fpbf.pdf pdf_icon

IRG4PC50FD

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

MOSTRAR MÁS

Otros transistores... IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , FGA25N120ANTD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD .

 

 
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