IRG4PC50FD
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PC50FD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.45
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 25
nS
Coesⓘ - Capacitancia de salida, typ: 250
pF
Qgⓘ - Carga total de la puerta, typ: 190
nC
Paquete / Cubierta:
TO247AC
Búsqueda de reemplazo de IRG4PC50FD
- IGBT
IRG4PC50FD
Datasheet (PDF)
..1. Size:214K international rectifier
irg4pc50fd.pdf 
PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high
5.1. Size:152K international rectifier
irg4pc50f.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,
5.2. Size:323K international rectifier
irg4pc50f-e.pdf
PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar
5.3. Size:310K infineon
irg4pc50fpbf.pdf
PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard
Otros transistores... IRG4PC40FD
, IRG4PC40K
, IRG4PC40KD
, IRG4PC40S
, IRG4PC40U
, IRG4PC40UD
, IRG4PC40W
, IRG4PC50F
, CRG40T60AN3H
, IRG4PC50K
, IRG4PC50KD
, IRG4PC50S
, IRG4PC50U
, IRG4PC50UD
, IRG4PC50W
, IRG4PF50W
, IRG4PF50WD
.
