CM600E2Y-34H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM600E2Y-34H 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 6900 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.75 V @25℃
trⓘ - Tiempo de subida, typ: 1500 nS
Coesⓘ - Capacitancia de salida, typ: 10000 pF
Encapsulados: MODULE
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CM600E2Y-34H datasheet
..1. Size:166K 1
cm600e2y-34h.pdf 
MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600E2Y-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic brak
9.1. Size:76K 1
cm600hn-5f.pdf
MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE CM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Forklift OUTLINE DRAWING & CIR
9.2. Size:166K 1
cm600dy-34h.pdf
MITSUBISHI HVIGBT MODULES CM600DY-34H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Ind
9.4. Size:382K 1
cm600du-24nfh.pdf
CM600DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com NFH-Series Module 600 Amperes/1200 Volts A M D M V L H J E B C2E1 E2 C1 H U R W N Y X L Description AC Q Q P Powerex IGBTMOD Modules AD S - NUTS (3 TYP) are designed for use in high T - (4 TYP) frequency applications; 30 kHz V for hard
9.5. Size:105K 1
cm600hg-130h.pdf
MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate
9.6. Size:72K 1
cm600du-5f.pdf
CM600DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/250 Volts A D TC Measured F Point T - (4 TYP.) H G2 E2 C B E L J E1 C2E1 E2 C1 R CM G1 25 25 X H Description S - NUTS Q Q P N G (3 TYP) Powerex IGBTMOD Modules are V - THICK x W - WIDE designed for use in switching TAB (4 PLA
9.8. Size:86K 1
cm600hu-12f.pdf
CM600HU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts M (2 TYP.) N (2 TYP) A D G C E F P G E CM C L E B Description H J K R Powerex IGBTMOD Modules TC MEASURING are designed for use in switching L (4 TYP) POINT applications. Each module consists of one IGBT Trans
9.10. Size:64K 1
cm600hb-90h.pdf
CM600HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD HVIGBT 600 Amperes/4500 Volts A D V NUTS LL (4 TYP) N S Y C C P G F E B E E CM Q Description C E G Powerex IGBTMOD Modules R are designed for use in switching applications. Each module consists U NUTS of one IGBT Transistor with a (3 TYP) H T W re
9.13. Size:96K 1
cm600hg-90h.pdf
MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC Baseplate AP
9.14. Size:65K 1
cm600du-24f.pdf
CM600DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/1200 Volts A TC MEASURED POINT B F G C L T - (4 TYP.) M N R Z P C C E Q L X AA Y P Description W - (4 PLACES) Powerex IGBTMOD Modules are designed for use in switching S - (3 PLACES) applications. Each module consists
9.16. Size:53K 1
cm600ha-5f.pdf
CM600HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts H G F E D J W - DIA. (4 TYP.) K y Q P E M L N E C x G C Description B Powerex IGBTMOD Modules A R are designed for use in switching applications. Each module consists U - THD. V -THD. of one IGBT Transistor in a s
Otros transistores... CM600DU-5F, CM600DX-24S1, CM600DXL-24S, CM600DXL-34SA, CM600DY-12NF, CM600DY-24A, CM600DY-24S, CM600DY-34H, NGTB75N65FL2, CM600HA-5F, CM600HB-90H, CM600HG-130H, CM600HG-90H, CM600HN-5F, CM600HU-12F, CM75DU-12F, CM75DU-24F
