All IGBT. CM600E2Y-34H Datasheet

 

CM600E2Y-34H IGBT. Datasheet pdf. Equivalent


   Type Designator: CM600E2Y-34H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 6900 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1500 nS
   Coesⓘ - Output Capacitance, typ: 10000 pF
   Qgⓘ - Total Gate Charge, typ: 3300 nC
   Package: MODULE

 CM600E2Y-34H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM600E2Y-34H Datasheet (PDF)

 ..1. Size:166K  1
cm600e2y-34h.pdf

CM600E2Y-34H
CM600E2Y-34H

MITSUBISHI HVIGBT MODULESCM600E2Y-34HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600E2Y-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 1-elements in a pack (for brake)APPLICATIONDC choppers, Dynamic brak

 9.1. Size:76K  1
cm600hn-5f.pdf

CM600E2Y-34H
CM600E2Y-34H

MITSUBISHI IGBT MODULESCM600HN-5FHIGH POWER SWITCHING USEINSULATED TYPECM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL RecognizedYellow Card No. E80276File No. E80271APPLICATIONUPS, ForkliftOUTLINE DRAWING & CIR

 9.2. Size:166K  1
cm600dy-34h.pdf

CM600E2Y-34H
CM600E2Y-34H

MITSUBISHI HVIGBT MODULESCM600DY-34HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind

 9.3. Size:706K  1
cm600dxl-24s.pdf

CM600E2Y-34H

 9.4. Size:382K  1
cm600du-24nfh.pdf

CM600E2Y-34H
CM600E2Y-34H

CM600DU-24NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comNFH-Series Module600 Amperes/1200 VoltsAM D MVLHJE BC2E1 E2 C1HURWNYXLDescription:ACQ Q P Powerex IGBTMOD Modules ADS - NUTS (3 TYP)are designed for use in high T - (4 TYP)frequency applications; 30 kHz Vfor hard

 9.5. Size:105K  1
cm600hg-130h.pdf

CM600E2Y-34H
CM600E2Y-34H

MITSUBISHI HVIGBT MODULESCM600HG-130HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

 9.6. Size:72K  1
cm600du-5f.pdf

CM600E2Y-34H
CM600E2Y-34H

CM600DU-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODF-Series Module600 Amperes/250 VoltsADTC Measured FPointT - (4 TYP.)HG2E2CB E L JE1C2E1 E2 C1R CMG125 25XHDescription:S - NUTS Q Q P NG(3 TYP)Powerex IGBTMOD Modules areV - THICK x W - WIDEdesigned for use in switchingTAB (4 PLA

 9.7. Size:814K  1
cm600dx-24s1.pdf

CM600E2Y-34H

 9.8. Size:86K  1
cm600hu-12f.pdf

CM600E2Y-34H
CM600E2Y-34H

CM600HU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/600 VoltsM (2 TYP.)N (2 TYP)ADGCEFPGECMCLEBDescription:H J K RPowerex IGBTMOD ModulesTC MEASURINGare designed for use in switchingL (4 TYP)POINTapplications. Each module consistsof one IGBT Trans

 9.9. Size:184K  1
cm600dy-12nf.pdf

CM600E2Y-34H

 9.10. Size:64K  1
cm600hb-90h.pdf

CM600E2Y-34H
CM600E2Y-34H

CM600HB-90HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODHVIGBT600 Amperes/4500 VoltsADV NUTSLL(4 TYP)NSYC CP GFE BE ECMQDescription:CE GPowerex IGBTMOD ModulesRare designed for use in switchingapplications. Each module consistsU NUTSof one IGBT Transistor with a (3 TYP) HTW re

 9.11. Size:190K  1
cm600dy-24a.pdf

CM600E2Y-34H

 9.12. Size:495K  1
cm600dy-24s.pdf

CM600E2Y-34H

 9.13. Size:96K  1
cm600hg-90h.pdf

CM600E2Y-34H
CM600E2Y-34H

MITSUBISHI HVIGBT MODULESCM600HG-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC BaseplateAP

 9.14. Size:65K  1
cm600du-24f.pdf

CM600E2Y-34H
CM600E2Y-34H

CM600DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODF-Series Module600 Amperes/1200 VoltsATC MEASURED POINTBF GCLT - (4 TYP.)MNRZPCC E QLXAAYPDescription:W - (4 PLACES)Powerex IGBTMOD Modules aredesigned for use in switchingS - (3 PLACES)applications. Each module consists

 9.15. Size:640K  1
cm600dxl-34sa.pdf

CM600E2Y-34H

 9.16. Size:53K  1
cm600ha-5f.pdf

CM600E2Y-34H
CM600E2Y-34H

CM600HA-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/250 VoltsH G F E DJW - DIA. (4 TYP.)KyQPEM LNE CxGCDescription:BPowerex IGBTMOD ModulesA Rare designed for use in switchingapplications. Each module consistsU - THD.V -THD. of one IGBT Transistor in a s

Datasheet: CM600DU-5F , CM600DX-24S1 , CM600DXL-24S , CM600DXL-34SA , CM600DY-12NF , CM600DY-24A , CM600DY-24S , CM600DY-34H , YGW40N65F1A1 , CM600HA-5F , CM600HB-90H , CM600HG-130H , CM600HG-90H , CM600HN-5F , CM600HU-12F , CM75DU-12F , CM75DU-24F .

 

 
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