CM600E2Y-34H PDF and Equivalents Search

MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600E2Y-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic brak... See More ⇒

MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE CM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Forklift OUTLINE DRAWING & CIR... See More ⇒

MITSUBISHI HVIGBT MODULES CM600DY-34H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Ind... See More ⇒

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CM600DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com NFH-Series Module 600 Amperes/1200 Volts A M D M V L H J E B C2E1 E2 C1 H U R W N Y X L Description AC Q Q P Powerex IGBTMOD Modules AD S - NUTS (3 TYP) are designed for use in high T - (4 TYP) frequency applications; 30 kHz V for hard ... See More ⇒

MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate ... See More ⇒

CM600DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/250 Volts A D TC Measured F Point T - (4 TYP.) H G2 E2 C B E L J E1 C2E1 E2 C1 R CM G1 25 25 X H Description S - NUTS Q Q P N G (3 TYP) Powerex IGBTMOD Modules are V - THICK x W - WIDE designed for use in switching TAB (4 PLA... See More ⇒

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CM600HU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts M (2 TYP.) N (2 TYP) A D G C E F P G E CM C L E B Description H J K R Powerex IGBTMOD Modules TC MEASURING are designed for use in switching L (4 TYP) POINT applications. Each module consists of one IGBT Trans... See More ⇒

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CM600HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD HVIGBT 600 Amperes/4500 Volts A D V NUTS LL (4 TYP) N S Y C C P G F E B E E CM Q Description C E G Powerex IGBTMOD Modules R are designed for use in switching applications. Each module consists U NUTS of one IGBT Transistor with a (3 TYP) H T W re... See More ⇒

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MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC Baseplate AP... See More ⇒

CM600DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/1200 Volts A TC MEASURED POINT B F G C L T - (4 TYP.) M N R Z P C C E Q L X AA Y P Description W - (4 PLACES) Powerex IGBTMOD Modules are designed for use in switching S - (3 PLACES) applications. Each module consists ... See More ⇒

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CM600HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts H G F E D J W - DIA. (4 TYP.) K y Q P E M L N E C x G C Description B Powerex IGBTMOD Modules A R are designed for use in switching applications. Each module consists U - THD. V -THD. of one IGBT Transistor in a s... See More ⇒