CM600HA-5F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM600HA-5F
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 960 W
|Vce|ⓘ - Tensión máxima colector-emisor: 250 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 4000 nS
Coesⓘ - Capacitancia de salida, typ: 7500 pF
Qgⓘ - Carga total de la puerta, typ: 2200 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM600HA-5F - IGBT
CM600HA-5F Datasheet (PDF)
cm600ha-5f.pdf
CM600HA-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/250 VoltsH G F E DJW - DIA. (4 TYP.)KyQPEM LNE CxGCDescription:BPowerex IGBTMOD ModulesA Rare designed for use in switchingapplications. Each module consistsU - THD.V -THD. of one IGBT Transistor in a s
cm600hn-5f.pdf
MITSUBISHI IGBT MODULESCM600HN-5FHIGH POWER SWITCHING USEINSULATED TYPECM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL RecognizedYellow Card No. E80276File No. E80271APPLICATIONUPS, ForkliftOUTLINE DRAWING & CIR
cm600hg-130h.pdf
MITSUBISHI HVIGBT MODULESCM600HG-130HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate
cm600hu-12f.pdf
CM600HU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/600 VoltsM (2 TYP.)N (2 TYP)ADGCEFPGECMCLEBDescription:H J K RPowerex IGBTMOD ModulesTC MEASURINGare designed for use in switchingL (4 TYP)POINTapplications. Each module consistsof one IGBT Trans
cm600hb-90h.pdf
CM600HB-90HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODHVIGBT600 Amperes/4500 VoltsADV NUTSLL(4 TYP)NSYC CP GFE BE ECMQDescription:CE GPowerex IGBTMOD ModulesRare designed for use in switchingapplications. Each module consistsU NUTSof one IGBT Transistor with a (3 TYP) HTW re
cm600hg-90h.pdf
MITSUBISHI HVIGBT MODULESCM600HG-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC BaseplateAP
Otros transistores... CM600DX-24S1 , CM600DXL-24S , CM600DXL-34SA , CM600DY-12NF , CM600DY-24A , CM600DY-24S , CM600DY-34H , CM600E2Y-34H , FGL60N100BNTD , CM600HB-90H , CM600HG-130H , CM600HG-90H , CM600HN-5F , CM600HU-12F , CM75DU-12F , CM75DU-24F , CM75MXA-24S .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2