CM600HA-5F datasheet, подбор замены IGBT

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 cm600ha-5f.pdf 

CM600HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts H G F E D J W - DIA. (4 TYP.) K y Q P E M L N E C x G C Description B Powerex IGBTMOD Modules A R are designed for use in switching applications. Each module consists U - THD. V -THD. of one IGBT Transistor in a s

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 cm600hn-5f.pdf 

MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE CM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Forklift OUTLINE DRAWING & CIR

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 cm600hg-130h.pdf 

MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

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 cm600hu-12f.pdf 

CM600HU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts M (2 TYP.) N (2 TYP) A D G C E F P G E CM C L E B Description H J K R Powerex IGBTMOD Modules TC MEASURING are designed for use in switching L (4 TYP) POINT applications. Each module consists of one IGBT Trans

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 cm600hb-90h.pdf 

CM600HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD HVIGBT 600 Amperes/4500 Volts A D V NUTS LL (4 TYP) N S Y C C P G F E B E E CM Q Description C E G Powerex IGBTMOD Modules R are designed for use in switching applications. Each module consists U NUTS of one IGBT Transistor with a (3 TYP) H T W re

 8.5. Size:96K  1
 cm600hg-90h.pdf 

MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC Baseplate AP