CM600HU-12F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM600HU-12F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1420 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 400 nS
Coesⓘ - Capacitancia de salida, typ: 11000 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM600HU-12F IGBT
CM600HU-12F Datasheet (PDF)
cm600hu-12f.pdf

CM600HU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/600 VoltsM (2 TYP.)N (2 TYP)ADGCEFPGECMCLEBDescription:H J K RPowerex IGBTMOD ModulesTC MEASURINGare designed for use in switchingL (4 TYP)POINTapplications. Each module consistsof one IGBT Trans
cm600hn-5f.pdf

MITSUBISHI IGBT MODULESCM600HN-5FHIGH POWER SWITCHING USEINSULATED TYPECM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL RecognizedYellow Card No. E80276File No. E80271APPLICATIONUPS, ForkliftOUTLINE DRAWING & CIR
cm600hg-130h.pdf

MITSUBISHI HVIGBT MODULESCM600HG-130HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate
cm600hb-90h.pdf

CM600HB-90HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODHVIGBT600 Amperes/4500 VoltsADV NUTSLL(4 TYP)NSYC CP GFE BE ECMQDescription:CE GPowerex IGBTMOD ModulesRare designed for use in switchingapplications. Each module consistsU NUTSof one IGBT Transistor with a (3 TYP) HTW re
Otros transistores... CM600DY-24S , CM600DY-34H , CM600E2Y-34H , CM600HA-5F , CM600HB-90H , CM600HG-130H , CM600HG-90H , CM600HN-5F , RJH60F7BDPQ-A0 , CM75DU-12F , CM75DU-24F , CM75MXA-24S , CM75MXA-34SA , CM75RL-12NF , CM75RL-24NF , CM75RX-24S , CM75RX-34SA .
History: STGW30N120KD
History: STGW30N120KD



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa872 | 2sc1222 | 2sc2581 | c1061 transistor | 2sc1451 | c3199 transistor | 2n2712 datasheet | 2sc2525