CM800E6C-66H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM800E6C-66H
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 9600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 1000 nS
Coesⓘ - Capacitancia de salida, typ: 12000 pF
Qgⓘ - Carga total de la puerta, typ: 5700 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM800E6C-66H - IGBT
CM800E6C-66H Datasheet (PDF)
cm800e6c-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E6C-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E6C-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack (for brake) AISiC BaseplateAPPLICAT
cm800e2c-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E2C-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E2C-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) AISiC base plateAPPLICA
cm800e2z-66h.pdf
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cm800dzb-34n.pdf
MITSUBISHI HVIGBT MODULESCM800DZB-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800DZB-34N IC ...................................................................800A VCES ....................................................... 1700V Insulated Type 2-element in a Pack AISiC Baseplate T
cm800hb-50h.pdf
MITSUBISHI HVIGBT MODULESCM800HB-50HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800hc-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm800hb-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800dz-34h.pdf
CM800DZ-34H HIGH POWER SWITHCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800DZ-34H I 800 A C V 1700 V CES
cm800ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Indu
tpcm8001-h.pdf
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tpcm8002-h.pdf
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tpcm8004-h.pdf
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 50.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 5.0 nC (ty
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Liste
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