CM800E6C-66H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM800E6C-66H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 9600 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 1000
Capacitancia de salida (Cc), typ, pF: 12000
Carga total de la puerta (Qg), typ, nC: 5700
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM800E6C-66H - IGBT
CM800E6C-66H Datasheet (PDF)
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tpcm8006.pdf
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tpcm8002-h.pdf
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tpcm8004-h.pdf
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Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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