CM800E6C-66H IGBT. Datasheet pdf. Equivalent
Type Designator: CM800E6C-66H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 9600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 800 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 1000 nS
Coesⓘ - Output Capacitance, typ: 12000 pF
Qgⓘ - Total Gate Charge, typ: 5700 nC
Package: MODULE
CM800E6C-66H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM800E6C-66H Datasheet (PDF)
cm800e6c-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E6C-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E6C-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack (for brake) AISiC BaseplateAPPLICAT
cm800e2c-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E2C-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E2C-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) AISiC base plateAPPLICA
cm800e2z-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E2Z-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E2Z-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake)APPLICATIONDC choppers,
cm800dzb-34n.pdf
MITSUBISHI HVIGBT MODULESCM800DZB-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800DZB-34N IC ...................................................................800A VCES ....................................................... 1700V Insulated Type 2-element in a Pack AISiC Baseplate T
cm800hb-50h.pdf
MITSUBISHI HVIGBT MODULESCM800HB-50HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800hc-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm800hb-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800dz-34h.pdf
CM800DZ-34H HIGH POWER SWITHCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800DZ-34H I 800 A C V 1700 V CES
cm800ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Indu
tpcm8001-h.pdf
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M A8 5Portable-Equipment Applications 0.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate char
tpcm8003-h.pdf
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tpcm8006.pdf
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tpcm8002-h.pdf
TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.050.250.80.05 M A5Portable Equipment Applications 80.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 9.3 nC
tpcm8004-h.pdf
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 50.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 5.0 nC (ty
Datasheet: CM75TU-12F , CM75TU-24F , CM75TX-24S , CM800DY-24S , CM800DZ-34H , CM800DZB-34N , CM800E2C-66H , CM800E2Z-66H , FGW75N60HD , CM800HA-50H , CM800HA-66H , CM800HB-50H , CM800HB-66H , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H .
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