CM900HG-90H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM900HG-90H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 11300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 4500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 900 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 1200 nS
Coesⓘ - Capacitancia de salida, typ: 12000 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
CM900HG-90H Datasheet (PDF)
cm900hg-90h.pdf

MITSUBISHI HVIGBT MODULESCM900HG-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM900HG-90H IC ..................................................................900 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC BaseplateAP
cm900hb-90h.pdf

MITSUBISHI HVIGBT MODULESCM900HB-90HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM900HB-90H IC...................................................................900A VCES ....................................................... 4500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm900hc-90h.pdf

MITSUBISHI HVIGBT MODULESCM900HC-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM900HC-90H IC ..................................................................900 A VCES ...................................................... 4500 V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICA
Otros transistores... CM800HA-50H , CM800HA-66H , CM800HB-50H , CM800HB-66H , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , FGH40N60SFD , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 .
History: JT010N065CED | MMG200D120B6UC | DM2G150SH6NE | CM50YE13-12H | CM600DXL-24S | MMG200D120UA6TC | CM100RL-24NF
History: JT010N065CED | MMG200D120B6UC | DM2G150SH6NE | CM50YE13-12H | CM600DXL-24S | MMG200D120UA6TC | CM100RL-24NF



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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