DF1000R17IE4 Todos los transistores

 

DF1000R17IE4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DF1000R17IE4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 6250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1390 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Paquete / Cubierta: MODULE

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DF1000R17IE4 Datasheet (PDF)

 ..1. Size:571K  infineon
df1000r17ie4.pdf

DF1000R17IE4
DF1000R17IE4

DF1000R17IE4PrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter

 0.1. Size:680K  infineon
df1000r17ie4d-b2.pdf

DF1000R17IE4
DF1000R17IE4

Technische Information / Technical InformationIGBT-ModuleDF1000R17IE4D_B2IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hilfsumr

 0.2. Size:876K  infineon
df1000r17ie4d b2.pdf

DF1000R17IE4
DF1000R17IE4

/ Technical InformationIGBT-DF1000R17IE4D_B2IGBT-modulesPrimePACK3 and NTCPrimePACK3 module and NTC / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRM Typical Applications 3 3-Level-Applications

 9.1. Size:699K  infineon
df100r07w1h5fp-b54.pdf

DF1000R17IE4
DF1000R17IE4

DF100R07W1H5FP_B54EasyPACK Modul mit TRENCHSTOP 5 H5 und CoolSiC Diode und PressFIT / bereits aufgetragenemThermal Interface MaterialEasyPACK module with TRENCHSTOP 5 H5 and CoolSiC diode and PressFIT / pre-applied ThermalInterface MaterialV = 650VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications Solar Anwendungen Solar appl

 9.2. Size:720K  infineon
df100r07w1h5fp-b53.pdf

DF1000R17IE4
DF1000R17IE4

DF100R07W1H5FP_B53EasyPACK Modul mit TRENCHSTOP 5 H5 und CoolSiC Diode und PressFIT / bereits aufgetragenemThermal Interface MaterialEasyPACK module with TRENCHSTOP 5 H5 and CoolSiC diode and PressFIT / pre-applied ThermalInterface MaterialV = 650VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications Solar Anwendungen Solar appl

 9.3. Size:167K  solitron
sdf100na40.pdf

DF1000R17IE4

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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