DF200R12W1H3_B27 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DF200R12W1H3_B27
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DF200R12W1H3_B27 - IGBT
DF200R12W1H3_B27 Datasheet (PDF)
df200r12w1h3 b27.pdf
/ Technical InformationIGBT-DF200R12W1H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 30A / I = 60AC nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al
df200r12pt4 b6.pdf
/ Technical InformationIGBT-DF200R12PT4_B6IGBT-modulesEconoPACK4 / IGBT4 and diode andNTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC
df200r12pt4-b6.pdf
Technische Information / Technical InformationIGBT-ModuleDF200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli
df200r12ke3.pdf
Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst
df200r12ke3.pdf
Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst
Otros transistores... DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , IXGH60N60 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2