DF200R12W1H3_B27 Todos los transistores

 

DF200R12W1H3_B27 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DF200R12W1H3_B27
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 10 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

DF200R12W1H3_B27 Datasheet (PDF)

 0.1. Size:945K  infineon
 df200r12w1h3 b27.pdf pdf_icon

DF200R12W1H3_B27

/ Technical InformationIGBT-DF200R12W1H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 30A / I = 60AC nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al

 6.1. Size:1029K  infineon
 df200r12pt4 b6.pdf pdf_icon

DF200R12W1H3_B27

/ Technical InformationIGBT-DF200R12PT4_B6IGBT-modulesEconoPACK4 / IGBT4 and diode andNTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC

 6.2. Size:833K  infineon
 df200r12pt4-b6.pdf pdf_icon

DF200R12W1H3_B27

Technische Information / Technical InformationIGBT-ModuleDF200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 6.3. Size:166K  infineon
 df200r12ke3.pdf pdf_icon

DF200R12W1H3_B27

Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGH48N60A3 | FF150R12YT3 | APT35GN120B | RGT8BM65D | APTGF75DDA120T | GT50L101 | JNG25T120AI

 

 
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