DIM1000ECM33-TS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DIM1000ECM33-TS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 10400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1000 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 400 nS

Encapsulados: MODULE

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DIM1000ECM33-TS datasheet

 0.1. Size:532K  dynex
 dim1000ecm33-tl.pdf pdf_icon

DIM1000ECM33-TS

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 0.2. Size:532K  dynex
 dim1000ecm33-ts.pdf pdf_icon

DIM1000ECM33-TS

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 7.1. Size:492K  dynex
 dim1000nsm33-ts.pdf pdf_icon

DIM1000ECM33-TS

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

 7.2. Size:492K  dynex
 dim1000nsm33-tl.pdf pdf_icon

DIM1000ECM33-TS

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

MOSTRAR MÁS

Otros transistores... DF650R17IE4, DF650R17IE4D_B2, DF75R12W1H4F_B11, DF80R12W2H3_B11, DF80R12W2H3F_B11, DF900R12IP4D, DF900R12IP4DV, DIM1000ECM33-TL, YGW60N65F1A1, DIM1000NSM33-TL, DIM1000NSM33-TS, DIM1000XSM33-TL001, DIM1000XSM33-TS001, DIM100PHM33-F, DIM1200ASM45-TS, DIM1200ASM45-TS001, DIM1200ESM33-F